IXFK44N50F
IXFX44N50F
Fig. 7. Input Admittance
100
90
80
70
60
TJ = 125ºC
50
25ºC
- 40ºC
40
30
20
10
0
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
VGS - Volts
Fig. 8. Transconductance
70
TJ = - 40ºC
60
50
25ºC
40
125ºC
30
20
10
0
0
10 20 30 40
50 60 70 80 90 100
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
140
120
100
80
60
TJ = 125ºC
40
TJ = 25ºC
20
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD - Volts
16
14
VDS = 250V
I D = 22A
12
I G = 10mA
Fig. 10. Gate Charge
10
8
6
4
2
0
0 20 40 60 80 100 120 140 160 180 200 220
QG - NanoCoulombs
10,000
1,000
Fig. 11. Capacitance
Ciss
Coss
1,000.0
Fig. 12. Forward-Bias Safe Operating Area
100.0
RDS(on) Limit
25µs
10.0
100µs
Crss
f = 1 MHz
100
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1.0
TJ = 150ºC
TC = 25ºC
Single Pulse
0.1
10
100ms
DC
100
VDS - Volts
1ms
10ms
1,000