24N50Q Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
24N50Q Datasheet PDF : 2 Pages
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Symbol
gfs
C
iss
Coss
C
rss
t
d(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 15 V; ID = IT
Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
RG = 1 Ω (External),
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
14 24
S
3900
pF
500
pF
130
pF
28
ns
30
ns
55
ns
16
ns
95
nC
27
nC
40
nC
0.50 K/W
0.15
K/W
IXFR 24N50Q
IXFR 26N50Q
ISOPLUS 247 OUTLINE
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
26 A
104 A
VSD
IF = IS, VGS = 0 V, Note 1
1.3 V
t
rr
TJ = 25°C
250 ns
QRM
IF = Is, -di/dt = 100 A/µs, TJ = 25°C
0.85 1.5 µ C
IRM
VR = 100 V
TJ = 25°C
8
A
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. IT test current: IXFR26N50Q IT = 13A
IXFR24N50Q IT = 12A
3. See IXFH26N50Q data sheet for characteristic curves.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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