PDTA115E Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
PDTA115E Datasheet PDF : 14 Pages
| |||
Philips Semiconductors
PNP resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
Product specification
PDTA115E series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
SOT23
SOT54
SOT323
SOT346
SOT416
SOT490
SOT883
CONDITIONS
Tamb ≤ 25 °C
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line.
VALUE
500
250
625
500
833
500
500
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
VCB = −50 V; IE = 0 A
VCE = −30 V; IB = 0 A
VCE = −30 V; IB = 0 A;
Tj = 150 °C
VEB = −5 V; IC = 0 A
VCE = −5 V; IC = −5 mA
IC = −5 mA; IB = −0.25 mA
IC = −100 µA; VCE = −5 V
IC = −1 mA; VCE = −0.3 V
RR-----21--
resistor ratio
Cc
collector capacitance
IE = ie = 0 A; VCB = −10 V;
f = 1 MHz
MIN.
−
−
−
TYP.
−
−
−
MAX. UNIT
−100 nA
−1
µA
−50 µA
−
−
−50 µA
80
−
−
−
−
−150 mV
−
−1.2 −0.5 V
−3
−1.6 −
V
70
100 130 kΩ
0.8 1
1.2
−
−
3
pF
2004 Jul 30
5
Share Link: 