2N3879 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2N3879 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N3879
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0
75
V
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A
1.2
V
VBEsat Base-emitter saturation voltage
ICEV
Collector cut-off current
ICEO
Collector cut-off current
IC=4A; IB=0.4A
VCE=120V;VBE(off)=1.5V
VCE=100V;VBE(off)=1.5V TC=150℃
VCE=40V; IB=0
2.0
V
0.5
4.0
mA
5.0 mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1.0 mA
hFE-1
DC current gain
IC=4A ; VCE=2V
12
100
hFE-2
DC current gain
IC=4A ; VCE=5V
20
80
hFE-3
DC current gain
IC=0.5A ; VCE=5V
40
COB
Collector output capacitance
IE=0 ; VCB=10V; f=1MHz
175 pF
2
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