2SB1275 / 2SB1236A
Electrical characteristics curves
−1.0
Ta=25°C
−0.8
−10mA
−9mA
−0.6 −8mA
−7mA
−0.4
PC=1W
−6mA
−5mA
−4mA
−3mA
−0.2
−2mA
0
IB= 0mA
−1mA
0
−1
−2
−3
−4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Ground emitter output characteristics
1000
500
200 Ta=100°C
100
50
−25°C
20
10
5
25°C
VCE= −10V
2
1
−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current ( )
1000
VCE= −5V
500
Ta=25°C
200
100
50
20
10
5
2
1
12
5 10 20 50 100 200 500 1000
EMITTER CURRENT : IE (mA)
Fig.7 Resistance raito vs. emmiter current
Data Sheet
−10
VCE= −5V
−5
−2
−1
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Ground emitter propagation characteristics
1000
Ta=25°C
500
200
VCE= −10V
100
50
20
−5V
10
5
2
1
−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector current ( )
−10
Ta=25°C
−5
−2
−1
−0.5
IC/IB=50
−0.2
−0.1
20
10
−0.05
−0.02
−0.01
−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage
vs. collector current
1000
f=1MHz
500
IE=0A
Ta=25°C
200
100
50
20
10
5
2
1
−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance vs.
collector-base voltage
−10
IC/IB=10
−5
−2
−1 Ta= −25°C
25°C
−0.5
100°C
−0.2
−0.1 Ta=100°C
−0.05
−25°C
−0.02
VBE(sat)
VCE(sat)
25°C
−0.01
−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10
COLLECTOR CURRENT : IC (A)
Fig.6
Collector-emitter saturation voltage
Base-emitter saturation voltage
vs.
collector
current
−10
−5 Ic Max. (Pulse∗)
−2
Pw=10ms∗
−1
−0.5
100ms∗
−0.2
DC
−0.1
−0.05
−0.02
−0.01
−0.005 Ta=25°C
∗ Single
−0.002 NONREPETITIVE
−0.001 PULSE
−0.1 −0.2 −0.5 −1 −2 −5 −10
−20 −50 −100 −200 −500 −1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area (2SB1236A)
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2009.12 - Rev.B