IRG4PH50KD Ver la hoja de datos (PDF) - International Rectifier

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Fabricante

IRG4PH50KD

Short Circuit Rated UltraFast IGBT

International Rectifier 

30

25

20

S qua re wave:

15

60% of rated

v olta ge

I

10

Ideal diodes

5

0

0.1

IRG4PH50KD

For both:

D uty cycle: 50%

TJ = 125°C

Tsink = 90°C

G ate drive as specified

P o w e r D is s ip a tio n = 40W

1

10

100

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100

100

 TJ = 150 °C

10

 TJ = 25 °C

 VGE = 15V

20µs PULSE WIDTH

1

1

10

VCE, Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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 TJ = 150 °C

10

 TJ = 25 °C

 VCC = 50V

5µs PULSE WIDTH

1

5

6

7

8

9

10 11 12

VGE , Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3

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