IRG4PH50KD Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Fabricante

IRG4PH50KD

Short Circuit Rated UltraFast IGBT

International Rectifier 

4000

3000

2000

 VGE = 0V, f = 1MHz

Cies = Cge + Cgc , Cce SHORTED

Cres = Cgc

Coes = Cce + Cgc

 Cies

1000

0

1

C oes

C res

10

100

VCE , Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

IRG4PH50KD

 20

VCC = 400V

I C = 24A

16

12

8

4

0

0

40

80

120

160

200

QG , Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

 7.0 VCC = 890600VV

VGE = 15V

TJ = 25 °C

IC = 24A

6.6

6.2

5.8

 100 RG = O5.h0mΩ

VGE = 15V

VCC = 98600V

10

 IC = 48 A

 IC = 24 A

 IC = 12 A

5.4

0

10

20

30

40

50

RG R, GG,aGteaRteeRseisstiasntacnece(O( hΩm))

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

www.irf.com

1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature ( °C )

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

5

Share Link: