TEA1524P Ver la hoja de datos (PDF) - Philips Electronics
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TEA1524P Datasheet PDF : 20 Pages
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Philips Semiconductors
STARplugTM
Product specification
TEA152x family
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Duty factor regulator (pin REG)
VREG
GV(erroramp)
VREG(clamp)
input voltage
voltage gain of error amplifier
clamping voltage at pin REG
IREG = 6 mA
Valley switching (not implemented in TEA152xAJM versions)
dV/dtvalley
fvalley
dV/dt for valley recognition
ringing frequency for valley
switching
N × Vo = 100 V
td(valley-swon) delay from valley recognition to
switch-on
2.4 2.5 2.6 V
−
20 −
dB
−
−
7.5 V
−102 −
102 V/µs
200 550 800 kHz
−
150 −
ns
Current and short circuit winding protection
Vsource(max) maximum source voltage
td(propagation) delay from detecting VSRC(max) to
switch-off
dV/dt = 0.1 V/µs
dV/dt = 0.5 V/µs
Vswp
short circuit winding protection
voltage
dV/dt = 0.5 V/µs
tleb
blanking time for current and short
circuit winding protection
0.47 0.50 0.53 V
−
160 185 ns
0.7 0.75 0.8 V
250 350 450 ns
Output stage (FET)
IL(drain)
V(BR)drain
RDS(on)
tdrain(f)
drain leakage current
Vdrain = 650 V
−
−
drain breakdown voltage
Tj > 0 °C
650 −
drain-source on-state resistance
of TEA1520
Tj = 25 °C; Isource = −0.06 A
Tj = 100 °C; Isource = −0.06 A
−
48
−
68
drain-source on-state resistance
of TEA1521
Tj = 25 °C; Isource = −0.125 A
Tj = 100 °C; Isource = −0.125 A
−
24
−
34
drain-source on-state resistance
of TEA1522
Tj = 25 °C; Isource = −0.25 A
Tj = 100 °C; Isource = −0.25 A
−
12
−
17
drain-source on-state resistance
of TEA1523
Tj = 25 °C; Isource = −0.5 A
Tj = 100 °C; Isource = −0.5 A
−
6.5
−
9.0
drain-source on-state resistance
of TEA1524
Tj = 25 °C; Isource = −1.0 A
Tj = 100 °C; Isource = −1.0 A
−
3.4
−
4.8
drain fall time
Vi = 300 V; no external capacitor at −
75
drain
125 µA
−
V
55.2 Ω
78.2 Ω
27.6 Ω
39.1 Ω
13.8 Ω
19.6 Ω
7.5 Ω
10.0 Ω
3.9 Ω
5.5 Ω
−
ns
Temperature protection
Tprot(max)
Tprot(hys)
maximum temperature threshold
hysteresis temperature
150 160 170 °C
−
2
−
°C
2000 Sep 08
11
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