IRFZ34NSPBF Ver la hoja de datos (PDF) - Kersemi Electronic Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

IRFZ34NSPBF

Advanced Process Technology

Kersemi Electronic Co., Ltd. 

IRFZ34NS/LPBF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(ON)

VGS(th)

gfs

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

LS

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

55 ––– ––– V VGS = 0V, ID = 250µA

––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA…

––– ––– 0.040 Ω VGS = 10V, ID = 16A„

2.0 ––– 4.0 V VDS = VGS, ID = 250µA

6.5 ––– ––– S VDS = 25V, ID = 16A

––– ––– 25 µA VDS = 55V, VGS = 0V

––– ––– 250

VDS = 44V, VGS = 0V, TJ = 150°C

––– ––– 100 n A VGS = 20V

––– ––– -100

VGS = -20V

––– ––– 34

––– ––– 6.8

ID = 16A

nC VDS = 44V

––– ––– 14

––– 7.0 –––

VGS = 10V, See Fig. 6 and 13 „…

VDD = 28V

––– 49 ––– ns ID = 16A

––– 31 –––

RG = 18Ω

––– 40 –––

––– 7.5 ––– nH

RD = 1.8Ω, See Fig. 10 „…

Between lead,

and center of die contact

––– 700 –––

VGS = 0V

––– 240 ––– pF VDS = 25V

––– 100 –––

ƒ = 1.0MHz, See Fig. 5…

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

I SM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

––– ––– 29

––– ––– 100

––– ––– 1.6

––– 57 86

––– 130 200

MOSFET symbol

D

showing the

A integral reverse

G

p-n junction diode.

S

V TJ = 25°C, IS = 16A, VGS = 0V „

ns TJ = 25°C, IF = 16A

nC di/dt = 100A/µs „…

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ VDD = 25V, starting TJ = 25°C, L = 610µH

RG = 25Ω, IAS = 16A. (See Figure 12)

ƒ ISD ≤ 16 A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

… Uses IRFZ34N data and test conditions

2014-8-26

2

www.kersemi.com

Share Link: