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2SB624A Datasheet PDF : 6 Pages
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DATA SHEET
SILICON TRANSISTOR
2SB624A
AUDIO FREQUENCY POWER AMPLIFIER
PNP SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
• Complementary to NEC 2SD596A NPN Transistor.
• High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
−30
V
Collector to Emitter Voltage
VCEO
−25
V
Emitter to Base Voltage
VEBO
−5.0
V
Collector Current (DC)
IC
−700
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg −55 to +150 °C
PACKAGE DRAWING
(Unit: mm)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Saturation Voltage
Base to Emitter Voltage
Gain Bandwidth Product
Output Capacitance
SYMBOL
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE
fT
Cob
MIN.
110
50
−600
Note Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2%
TYP.
200
−0.25
−640
160
17
MAX.
−100
−100
400
−0.6
−700
hFE1 CLASSIFICATION
Marking
hFE1
BV1
110 to 180
BV2
135 to 220
BV3
170 to 270
BV4
200 to 320
1. Emitter
2. Base
3. Collector
UNIT
nA
nA
V
mV
MHz
pF
TEST CONDITIONS
VCB = −30 V, IE = 0 A
VEB = −5.0 V, IC = 0 A
VCE = −1.0 V, IC = −100 mA Note
VCE = −1.0 V, IC = −700 mA Note
IC = −700 mA, IB = −70 mA Note
VCE = −6.0 V, IC = −10 mA Note
VCE = −6.0 V, IE = 10 mA
VCB = −6.0 V, IE = 0 A, f = 1.0 MHz
BV5
250 to 400
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18029EJ1V0DS00 (1st edition)
c
Date Published April 2006 NS CP(K)
Printed in Japan
2006
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