PTFA192401EV4 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

PTFA192401EV4

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz

Infineon Technologies 

Confidential, Limited Internal Distribution

Typical Performance (cont.)

Bias Voltage vs. Temperature

Voltage normalized to typical gate voltage,

series show current

1.03

1.02

1.01

1.00

0.99

0.98

0.97

0.96

0.95

-20

0.44 A

1.32 A

2.20 A

3.30 A

6.61 A

9.91 A

13.22 A

16.52 A

0

20 40 60 80 100

Case Temperature (°C)

Broadband Circuit Impedance

Z Source

D

Z Load

Frequency

MHz

1900

1930

1960

1990

2020

G

S

Z Source Ω

R

jX

8.43

–8.22

8.00

–7.86

7.57

–7.51

7.19

–7.17

6.86

–6.77

Z Load Ω

R

jX

0.80

3.26

0.78

3.56

0.76

3.84

0.73

4.12

0.72

4.38

Data Sheet

6 of 11

PTFA192401E

PTFA192401F

Z Load

2020 MHz

1900 MHz

Z0 = 50 Ω

Z Source

0.1

2020 MHz

1900 MHz

0. 2

Rev. 02, 2009-04-01

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