2SB1228 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SB1228

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1228

DESCRIPTION

·With TO-220F package

·Complement to type 2SD1830

·High DC current gain.

·Large current capacity and wide ASO.

·Low saturation voltage.

·DARLINGTON

APPLICATIONS

·Suitable for use in control of motor drivers,

printer hammer drivers,relay drivers,and

constant-voltage regulators.

PINNING

PIN

DESCRIPTION

1

Base

2

Collector

固I电NC半H导A体NGE SEMICONDUCTOR 3

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

VCBO

Collector-base voltage

CONDITIONS

Open emitter

VALUE

-110

UNIT

V

VCEO

Collector-emitter voltage

Open base

-100

V

VEBO

Emitter-base voltage

Open collector

-6

V

IC

Collector current

-8

A

ICM

Collector current-peak

PC

Collector dissipation

TC=25℃

-12

A

20

W

2

Tj

Junction temperature

Tstg

Storage temperature

150

℃

-55~150

℃

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