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IRFP4332PBF

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International Rectifier 

IRFP4332PbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

250 ––– ––– V VGS = 0V, ID = 250µA

–––

–––

170

29

e ––– mV/°C Reference to 25°C, ID = 1mA

33 mΩ VGS = 10V, ID = 35A

3.0 ––– 5.0

V VDS = VGS, ID = 250µA

∆VGS(th)/∆TJ

IDSS

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

––– -14 ––– mV/°C

––– ––– 20 µA VDS = 250V, VGS = 0V

––– ––– 200 µA VDS = 250V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 100 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -100

VGS = -20V

gfs

Forward Transconductance

Qg

Total Gate Charge

100 ––– –––

––– 99 150

S VDS = 25V, ID = 35A

e nC VDD = 125V, ID = 35A, VGS = 10V

Qgd

tst

EPULSE

Ciss

Coss

Gate-to-Drain Charge

Shoot Through Blocking Time

Energy per Pulse

Input Capacitance

Output Capacitance

––– 35 –––

100 ––– –––

––– 520 –––

––– 920 –––

––– 5860 –––

––– 530 –––

ns VDD = 200V, VGS = 15V, RG= 4.7Ω

L = 220nH, C= 0.3µF, VGS = 15V

µJ VDS = 200V, RG= 5.1Ω, TJ = 25°C

L = 220nH, C= 0.3µF, VGS = 15V

VDS = 200V, RG= 5.1Ω, TJ = 100°C

VGS = 0V

pF VDS = 25V

Crss

Coss eff.

Reverse Transfer Capacitance

Effective Output Capacitance

––– 130 –––

––– 360 –––

ƒ = 1.0MHz,

VGS = 0V, VDS = 0V to 200V

LD

Internal Drain Inductance

––– 5.0 –––

Between lead,

D

nH 6mm (0.25in.)

LS

Internal Source Inductance

––– 13 –––

from package

G

and center of die contact

S

Avalanche Characteristics

EAS

EAR

VDS(Avalanche)

IAS

Parameter

d Single Pulse Avalanche Energy

™ Repetitive Avalanche Energy

Ù Repetitive Avalanche Voltage

Ãd Avalanche Current

Typ.

Max.

Units

–––

210

mJ

–––

36

mJ

300

–––

V

–––

35

A

Diode Characteristics

Parameter

IS @ TC = 25°C Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

Min.

–––

–––

–––

–––

–––

Typ.

–––

–––

–––

190

820

Max. Units

Conditions

57

MOSFET symbol

A showing the

230

integral reverse

1.3

290

1230

p-n junction diode.

e V TJ = 25°C, IS = 35A, VGS = 0V

ns TJ = 25°C, IF = 35A, VDD = 50V

e nC di/dt = 100A/µs

2

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