NXP Semiconductors
PMBT3906VS
40 V, 200 mA PNP/PNP switching transistor
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Tj
junction temperature
-
Tamb
ambient temperature
−55
Tstg
storage temperature
−65
Max Unit
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
400
Ptot
(mW)
300
006aab604
200
100
0
−75
−25
25
75
125
175
Tamb (°C)
FR4 PCB, standard footprint
Fig 1. Per device: Power derating curves SOT666
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Per device
Rth(j-a)
thermal resistance from
junction to ambient
Conditions
in free air
Min Typ Max Unit
[1][2] -
-
521 K/W
-
-
100 K/W
in free air
[1][2] -
-
347 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
PMBT3906VS_1
Product data sheet
Rev. 01 — 20 August 2009
© NXP B.V. 2009. All rights reserved.
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