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PMBT3906VS

40 V, 200 mA PNP/PNP switching transistor

NXP Semiconductors. 

NXP Semiconductors

PMBT3906VS

40 V, 200 mA PNP/PNP switching transistor

Table 8. Characteristics …continued

Tamb = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Cc

collector capacitance VCB = −5 V; IE = ie = 0 A;

f = 1 MHz

Ce

emitter capacitance VEB = −500 mV;

IC = ic = 0 A; f = 1 MHz

fT

transition frequency VCE = −20 V;

IC = −10 mA;

f = 100 MHz

NF

noise figure

VCE = −5 V;

IC = −100 µA; RS = 1 kΩ;

f = 10 Hz to 15.7 kHz

Min Typ Max Unit

-

-

4.5 pF

-

-

10

pF

250 -

-

MHz

-

-

4

dB

400

hFE

(1)

300

006aab120

200

(2)

(3)

100

0

−10−1

−1

−10

−102

−103

IC (mA)

VCE = −1 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig 3.

Per transistor:

DC current gain as a function of collector

current; typical values

−0.3

IC

(A)

−0.2

IB (mA) = −5.0

−4.5

−4.0

−3.5

−3.0

−0.1

006aab121

−2.5

−2.0

−1.5

−1.0

−0.5

0

0

−2

−4

−6

−8

−10

VCE (V)

Tamb = 25 °C

Fig 4.

Per transistor:

Collector current as a function of

collector-emitter voltage; typical values

PMBT3906VS_1

Product data sheet

Rev. 01 — 20 August 2009

© NXP B.V. 2009. All rights reserved.

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