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MPS3638A Datasheet PDF : 8 Pages
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ON Semiconductort
Switching Transistor
PNP Silicon
MPS3638A
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
VCEO
VCES
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
–25
–25
–25
–4.0
–500
625
5.0
1.5
12
–55 to +150
Symbol
RqJA(1)
RqJC
Max
200
83.3
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
1
2
3
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
COLLECTOR
3
2
BASE
1
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –100 mAdc, VBE = 0)
Collector–Emitter Sustaining Voltage(2)
(IC = –10 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = –15 Vdc, VBE = 0)
(VCE = –15 Vdc, VBE = 0, TA = –65°C)
Emitter Cutoff Current
(VEB = –3.0 V, IC = 0)
Base Current
(VCE = –15 Vdc, VBE = 0)
1. RqJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Symbol
Min
Max
Unit
V(BR)CES
VCEO(sus)
V(BR)CBO
V(BR)EBO
ICES
IEBO
IB
–25
–25
–25
–4.0
—
—
—
—
—
Vdc
—
Vdc
—
Vdc
—
Vdc
–0.035
–2.0
–35
mAdc
nA
–0.035 mAdc
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 1
Publication Order Number:
MPS3638A/D
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