2SB1063
PC Ta
80
(1)TC=Ta
(2)With a 100×100×2mm
Al heat sink
(3)Without heat sink
(PC=2.0W)
60
(1)
40
20
(2)
(3)
0
0
40
80
120
160
Ambient temperature Ta (°C)
IC VCE
−6
TC=25˚C
IB=–80mA
−5
–70mA
–60mA
−4
–50mA
–40mA
−3
–30mA
–20mA
−2
–10mA
−1
–5mA
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage VCE (V)
IC VBE
−6
VCE=–5V
25˚C
−5
TC=100˚C –25˚C
−4
−3
−2
−1
0
0 − 0.4 − 0.8 −1.2 −1.6 −2.0
Base-emitter voltage VBE (V)
−100
−10
−1
− 0.1
VCE(sat) IC
IC/IB=10
TC=100˚C
25˚C
–25˚C
hFE IC
104
VCE=–5V
103
TC=100˚C
25˚C
102
–25˚C
10
1 000
100
10
1
fT IC
VCE=–5V
f=1MHz
TC=25˚C
− 0.01
− 0.01
− 0.1
−1
−10
Collector current IC (A)
1
− 0.01
− 0.1
−1
−10
Collector current IC (A)
0.1
− 0.01
− 0.1
−1
−10
Collector current IC (A)
Safe operation area
Rth t
−100
102
Non repetitive pulse
(1)Without heat sink
(1)
TC=25˚C
(2)With a 100×100×2mm Al heat sink
(2)
−10 ICP
10
IC
t=1ms
DC
−1
t=10ms
1
− 0.1
10−1
− 0.01
−1
−10
−100
−1 000
Collector-emitter voltage VCE (V)
10−2
10−3
10−2
10−1
1
10
Time t (s)
102
103
104
2
SJD00039AED