IRFD120(2010) Ver la hoja de datos (PDF) - Vishay Semiconductors

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IRFD120
(Rev.:2010)

Power MOSFET

Vishay Semiconductors 

IRFD120, SiHFD120

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

TA = 25 °C

TJ = 175 °C

SINGLE PULSE

Fig. 8 - Maximum Safe Operating Area

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Document Number: 91128

S10-2462-Rev. C, 08-Nov-10

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