2SD1878 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SD1878 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1878
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0
800
V
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A
5.0
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IC=4A ;IB=0.8A
VCB=800V ;IE=0
1.5
V
10
μA
IEBO
Emitter cut-off current
VEB=4V;IC=0
40
130
mA
ICES
Collector cut-off current
VCE=1500V
1.0
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
8
hFE-2
DC current gain
IC=4A ; VCE=5V
5
10
VF
Diode forward voltage
tf
Fall time
IEC=5A ;
IC=4A;RL=66.7Ω;VCC=200V
IB1=0.8A; IB2=-1.6A
2
V
0.1
0.3
μs
2
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