MMBD4448W Ver la hoja de datos (PDF) - Transys Electronics Limited
Número de pieza
componentes Descripción
Fabricante
MMBD4448W Datasheet PDF : 1 Pages
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Transys
Electronics
LIMITED
SOT-323 Plastic-Encapsulated Diode
MMBD4448W SWITCHING DIODE
FEATURES
Power dissipation
PD:
200 mW (Tamb=25℃)
Collector current
IO:
250 mA
Collector-base voltage
VR:
75
V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SOT-323
1. 25¡ À0. 05
2. 30¡ À0. 05
Unit: mm
Marking: KA3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
V(BR) R
IR
VF
CD
t rr
Test conditions
IR= 10µA
VR=20V
VR=75V
IF=5mA
IF=10mA
IF=100mA
IF=150mA
VR=0V, f=1MHz
IF=IR=10mA
Irr=0.1×IR ,RL=100Ω
MIN
75
MAX
0.025
2.5
0.72
0.855
1
1.25
4
4
Test period <3000µs.
UNIT
V
µA
V
pF
nS
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