BB304M Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

BB304M

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Hitachi -> Renesas Electronics 

BB304M

Main Characteristics

Test Circuit for Operating Items (I D(o,p)|yfs|, Ciss, Coss, Crss, NF, PG)

VG2

Gate 2

RG

VG1

Gate 1

Drain

A

ID

Source

Power Gain, Noise Figure Test Circuit

VT

1000p

VG2

1000p

VT

1000p

Input(50 ¶)

1000p

1000p

47k

47k

BBFET

L1

36p

1000p

1SV70

R G 470k

47k

L2

1000p

Output(50 ¶)

10p max

RFC

1SV70

1000p

VD= VG1

L1 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns

L2 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns

RFC : 1mm Enameled Copper Wire,Inside dia 5mm, 2Turns

Unit @Resistance @( ¶)

@ @ Capacitance @(F)

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4

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