DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BB304M Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza
componentes Descripción
Fabricante
BB304M
Hitachi
Hitachi -> Renesas Electronics 
BB304M Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
BB304M
Drain Current vs. Gate1 Voltege
25
V DS = 9 V
20 R G = 470 k W
15
6V
5V
4V
10
3V
2V
5
VG2S = 1 V
0
2
4
6
8
10
Gate1 Voltage VG1 (V)
Drain Current vs. Gate1 Voltege
25
V DS = 9 V
20 R G = 560 k W
15
6V
5V
10
4V
3V
2V
5
VG2S = 1 V
0
2
4
6
8
10
Q [ g1 d ‡ G1 V
(V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V DS = 9 V
6V
R G = 390 k W
5V
24 f = 1 kHz
4V
3V
2V
18
12
6
VG2S = 1 V
0
2
4
6
8
10
Gate1 Voltage VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V DS = 9 V
6V
R G = 470 k W
5V
24 f = 1 kHz
4V
3V
2V
18
12
6
VG2S = 1 V
0
2
4
6
8
10
Gate1 Voltage VG1 (V)
6

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]