2SB1412 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SB1412

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

2SB1412

DESCRIPTION

·Small and slim package making it easy to make 2SB1205-used set smaller

·Low collector-to-emitter saturation voltage

·Fast switching speed

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Power amplifier applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-30

V

VCEO

Collector-Emitter Voltage

-20

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

-5

A

1.0

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

Share Link: