NGTB15N120FL2WG Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
NGTB15N120FL2WG Datasheet PDF : 11 Pages
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NGTB15N120FL2WG
TYPICAL CHARACTERISTICS
40
35
30
TJ = 25°C
25
TJ = 150°C
20
15
10
5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VF, FORWARD VOLTAGE (V)
Figure 7. Diode Forward Characteristics
16
14
12
10
8
6
4
VCE = 600 V
VGE = 15 V
2
IC = 15 A
0
0
20
40
60
80
100 120
QG, GATE CHARGE (nC)
Figure 8. Typical Gate Charge
0.9
0.8
Eoff
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
VCE = 600 V
VGE = 15 V
IC = 15 A
Rg = 10 W
20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
1000
VCE = 600 V
VGE = 15 V
IC = 15 A
Rg = 10 W
tf
td(off)
100
0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Switching Time vs. Temperature
2.5
VCE = 600 V
2.0
VGE = 15 V
TJ = 150°C
Rg = 10 W
Eoff
1.5
1.0
0.5
0
5 10 15 20 25 30 35 40 45
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
1000
tf
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
td(off)
100
5
10 15
20 25
30 35
40 45
IC, COLLECTOR CURRENT (A)
Figure 12. Switching Time vs. IC
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4
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