IXFA7N80P IXFI7N80P IXFP7N80P
Fig. 7. Input Admittance
8
7
6
5
TJ = 125ºC
25ºC
4
- 40ºC
3
2
1
0
3.4 3.6 3.8 4 4.2 4.4 4.6 4.8 5 5.2 5.4 5.6 5.8 6
VGS - Volts
16
14
12
10
8
6
4
2
0
0.3
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
TJ = 125ºC
TJ = 25ºC
0.4
0.5
0.6
0.7
0.8
0.9
1
VSD - Volts
10,000
1,000
Fig. 11. Capacitance
f = 1 MHz
Ciss
Coss
100
Fig. 8. Transconductance
18
16
TJ = - 40ºC
14
12
25ºC
10
8
125ºC
6
4
2
0
0
1
2
3
4
5
6
7
8
9
ID - Amperes
Fig. 10. Gate Charge
10
9
VDS = 400V
I D = 3.5A
8
I G = 10mA
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Resistance
1.0
0.1
10
Crss
1
0
5
10
15
20
25
30
35
40
VDS - Volts
0.0
0.00001 0.0001 0.001
0.01
0.1
1
10
Pulse W idth - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.