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MJD210_

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

Unisonic Technologies 

UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR

FIG. 1 POWER DERATING

FIG. 2 SWITCHING TIME TEST CIRCUIT

FIG. 3 TURN-ON TIME

RB and RC VARIED TO OBTAIN DESIRED CURRENT

LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB≈100mA

FOR PNP TEST CIRCUIT

MSD6100 USED BELOW IB≈100mA

REVERSE ALL POLARITIES

FIG. 4 TURN-OFF TIME

FIG. 5 DC CURRENT GAIN

FIG. 6 “ON” VOLTAGE

UTC UNISONIC TECHNOLOGIES CO., LTD. 3

QW-R213-001,A

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