2SB1182TL_09 Ver la hoja de datos (PDF) - ROHM Semiconductor
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2SB1182TL_09 Datasheet PDF : 4 Pages
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2SB1188 / 2SB1182 / 2SB1240
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −40
Collector-emitter breakdown voltage BVCEO −32
Emitter-base breakdown voltage
BVEBO
−5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE
120
Transition frequency
fT
−
Output capacitance
∗ Measured using pulse current.
Cob
−
Typ.
−
−
−
−
−
−0.5
−
100
50
Max.
−
−
−
−1
−1
−0.8
390
−
−
Unit
V
V
V
μA
μA
V
−
MHz
pF
Conditions
IC= −50μA
IC= −1mA
IE= −50μA
VCB= −20V
VEB= −4V
IC/IB= −2A/ −0.2A
∗
VCE= −3V, IC= −0.5A
∗
VCE= −5V, IE=0.5A, f=100MHz
VCB= −10V, IE=0A, f=1MHz
Packaging specifications and hFE
Package
Type
2SB1188
2SB1182
2SB1240
Code
hFE Basic ordering unit (pieces)
QR
QR
QR
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270 180 to 390
T100
1000
−
−
Taping
TL
2500
−
−
TV2
2500
−
−
Data Sheet
Electrical characteristic curves
−1000 Ta=100°C
−500
25°C
−40°C
−200
−100
−50
VCE= −3V
−20
−10
−5
−2
−1
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
−0.5
Ta=25°C −2.5mA
−0.4
−0.3
−0.2
−2.25mA
−2mA
−1.75mA
−1.5mA
−1.25mA
−1mA
−750μA
−500μA
−0.1
−250μA
0
IB=0A
0
−0.4 −0.8 −1.2 −1.6
−2
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics
500
Ta=25°C
VCE= −6V
−3V
−1V
200
100
50
20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs.
collector curren ( )
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○c 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.B
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