BFR35AP Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

BFR35AP

NPN Silicon RF Transistor

Siemens AG 

BFR 35AP

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-emitter cutoff current

VCE = 20 V, VBE = 0

Collector-base cutoff current

VCB = 10 V, IE = 0

Emitter-base cutoff current

VEB = 2.5 V, IC = 0

DC current gain

IC = 15 mA, VCE = 8 V

V(BR)CEO

15

ICES

-

ICBO

-

IEBO

-

hFE

40

V

-

-

µA

-

10

nA

-

100

µA

-

100

-

100

200

Semiconductor Group

2

Dec-12-1996

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