KSB1116A Ver la hoja de datos (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

Número de pieza

componentes Descripción

Fabricante

KSB1116A

Silicon PNP transistor in a TO-92 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

KSB1116(A)

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Base Current – Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

VCBO

VCEO

符号

Symbol

KSB1116

KSB1116A

KSB1116

KSB1116A

VEBO

IC

IB

PC

Tj

Tstg

DATA SHEET

数值

Rating

-60

-120

-50

-60

-6.0

-1.0

-2.0

750

150

-55～150

单位

Unit

V

V

V

A

A

mW

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector Cut-Off Current

Emitter Cut-Off Current

符号

Symbol

ICBO

IEBO

DC Current Gain

KSB1116

hFE(1)

KSB1116A

Collector to Emitter

Saturation Voltage

Base to Emitter Saturation

Voltage

Base to Emitter On Voltage

hFE(2)

VCE(sat)

VBE(sat)

VBE(ON)

Transition Frequency

fT

Collector Output

Capacitance

Cob

Turn-On Time

ton

Storage Time

tstg

Turn-Off Time

toff

测试条件

Test Conditions

最小值 典型值 最大值 单位

Min Typ Max Unit

VCB=-60V IE=0

-0.1 μA

VEB=-6.0V IC=0

-0.1 μA

135

600

VCE=-2.0V IC=-100mA

135

400

VCE=-2.0V IC=-1.0A

81

IC=-1.0A IB=-50mA

-0.2 -0.3 V

IC=-1.0A IB=-50mA

-0.9 -1.2 V

VCE=-2.0V IC=-50mA

VCE=-2.0V

VCB=-10V

f=1.0MHz

IC=-100mA

IE=0

VCC=-10V IC=-100mA

IB1=-IB2=-10mA

VBE(off)=2V~3V

-0.60

70

-0.65

120

25

0.07

0.7

0.07

-0.70

V

MHz

pF

μs

μs

μs

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