MUN5211DW1(2012) Ver la hoja de datos (PDF) - ON Semiconductor

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componentes Descripción

Fabricante

MUN5211DW1
(Rev.:2012)

Dual NPN Bias Resistor Transistors

ON Semiconductor 

MUN5211DW1, NSBC114EDXV6, NSBC114EDP6

ELECTRICAL CHARACTERISTICS (TA = 25C, common for Q1 and Q2, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

OFF CHARACTERISTICS

Collector-Base Cutoff Current

(VCB = 50 V, IE = 0)

ICBO

−

−

100

Collector-Emitter Cutoff Current

(VCE = 50 V, IB = 0)

ICEO

−

−

500

Emitter-Base Cutoff Current

(VEB = 6.0 V, IC = 0)

IEBO

−

−

0.5

Collector-Base Breakdown Voltage

(IC = 10 mA, IE = 0)

V(BR)CBO

50

−

−

Collector-Emitter Breakdown Voltage (Note 6)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

50

−

−

ON CHARACTERISTICS

DC Current Gain (Note 6)

(IC = 5.0 mA, VCE = 10 V)

hFE

35

60

−

Collector-Emitter Saturation Voltage (Note 6)

(IC = 10 mA, IB = 0.3 mA)

VCE(sat)

−

−

0.25

Input Voltage (Off)

(VCE = 5.0 V, IC = 100 mA)

Vi(off)

−

1.2

−

Input Voltage (On)

(VCE = 0.2 V, IC = 10 mA)

Vi(on)

−

2.0

−

Output Voltage (On)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

VOL

−

−

0.2

Output Voltage (Off)

(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

VOH

4.9

−

−

Input Resistor

R1

7.0

10

13

Resistor Ratio

6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle  2%.

R1/R2

0.8

1.0

1.2

Unit

nAdc

nAdc

mAdc

Vdc

Vdc

V

Vdc

Vdc

Vdc

Vdc

kW

400

350

300

250

200

(1) (2) (3)

150

(1) SOT−363; 1.0  1.0 Inch Pad

(2) SOT−563; Minimum Pad

(3) SOT−963; 100 mm2, 1 oz. Copper Trace

100

50

0

−50 −25

0 25 50 75 100 125 150

AMBIENT TEMPERATURE (C)

Figure 1. Derating Curve

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