MUN5211DW1(2012) Ver la hoja de datos (PDF) - ON Semiconductor
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MUN5211DW1 Datasheet PDF : 8 Pages
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MUN5211DW1, NSBC114EDXV6, NSBC114EDP6
TYPICAL CHARACTERISTICS
NSBC114EDP6
1
IC/IB = 10
25C
0.1
−55C
150C
1000
VCE = 10 V
100
10
25C
150C
−55C
0.01
0
2.4
2.0
1.6
1.2
0.8
0.4
0
0
1
10
20
30
40
50
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
Figure 8. DC Current Gain
f = 10 kHz
IE = 0 A
TA = 25C
100
150C
10
1
−55C
25C
10
20
30
40
VR, REVERSE VOLTAGE (V)
Figure 9. Output Capacitance
100
0.1
VO = 5 V
0.01
50
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (V)
Figure 10. Output Current vs. Input Voltage
10
25C
−55C
1
150C
VO = 0.2 V
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
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