SPP20N60S5(2001) Ver la hoja de datos (PDF) - Infineon Technologies
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Fabricante
SPP20N60S5 Datasheet PDF : 9 Pages
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Preliminary data
SPP20N60S5
SPB20N60S5
Cool MOS™=Power Transistor
•=New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
•=Improved periodic avalanche rating
• Extreme dv/dt rated
•=Optimized capacitances
•=Improved noise immunity
•=Former development designation:
SPPx1N60S5/SPBx1N60S5
COOLMOS
Power Semiconductors
Product Summary
VDS @ Tjmax 650 V
RDS(on)
0.19 Ω
ID
20 A
P-TO263-3-2
P-TO220-3-1
Type
Package
Ordering Code Marking
SPP20N60S5
P-TO220-3-1 Q67040-S4751 20N60S5
SPB20N60S5
P-TO263-3-2 Q67040-S4171 20N60S5
G,1
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC=25°C
TC=100°C
Pulsed drain current 1)
TC=25°C
Avalanche energy, single pulse
ID = 10 A, VDD = 50 V
Avalanche energy (repetitive, limited by Tjmax)
ID = 20 A, VDD = 50 V
Avalanche current (repetitive, limited by Tjmax)
Reverse diode dv/dt
ID
ID puls
EAS
EAR
IAR
dv/dt
IS=20A, VDS<VDSS, di/dt=100A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
VGS
Ptot
Tj , Tstg
Value
20
13
40
690
1
20
6
±20
208
-55... +150
D,2
S,3
Unit
A
mJ
A
kV/µs
V
W
°C
1
2001-07-25
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