2SB1502 Ver la hoja de datos (PDF) - Inchange Semiconductor

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2SB1502

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

isc Silicon PNP Darlington Power Transistor

INCHANGE Semiconductor

2SB1502

DESCRIPTION

·High DC Current Gain-

: hFE= 5000(Min)@IC= -4A

·Low-Collector Saturation Voltage-

: VCE(sat)= -2.5V(Max.)@IC= -4A

·Complement to Type 2SD2275

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Designed for power amplifier applications

·Optimum for 55W HiFi output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-5

A

ICM

Collector Current-Peak

Collector Power Dissipation

@ TC=25℃

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

-8

A

60

W

3.5

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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