D1556 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

D1556

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IE=200mA , IC=0

VCEsat Collector-emitter saturation voltage IC=5A; IB=1A

VBEsat Base-emitter saturation voltage

IC=5A; IB=1A

ICBO

Collector cut-off current

VCB=500V; IE=0

hFE

DC current gain

IC=1A ; VCE=5V

fT

Transition frequency

IC=0.1A ; VCE=10V

COB

Collector output capacitance

IE=0 ; VCB=10V;f=1MHz

VF

Diode forward voltage

tf

Fall time

IF=6A

ICP=5A ;IB1(end)=1A

Product Specification

2SD1556

MIN TYP. MAX UNIT

5

V

3.0

5.0

V

1.5

V

10

μA

8

3

MHz

165

pF

1.6

2.0

V

0.5

1.0

μs

2

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