MJ10020 Ver la hoja de datos (PDF) - New Jersey Semiconductor
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MJ10020
New Jersey Semiconductor
MJ10020 Datasheet PDF : 2 Pages
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MJ10020 MJ10021
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 1)
(IC = 100mA, IB = 0)
MJ 10020 VcEO(sus)
200
MJ10021
250
Collector Cutoff Current
(VcEV = Rated Value, VBE(off) = 1-5 Vdc)
(VcEV =Rated Value, VsE(off) = 1-5vdc. TC = 150°C)
Collector Cutoff Current
(VCE = Rated VCEV RBE = so n, TC = ioo°o
Emitter Cutoff Current
(VEB = 2.0 V, IC = 0)
'CEV
—
!CER
—
!EBO
—
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
Clamped Inductive SOA with Base Reverse Biased
"S/b
RBSOA
ON CHARACTERISTICS (1)
DC Current Gain
(lc = 1 5 Adc,VCE = 5.0V)
hFE
75
Collector-Emitter Saturation Voltage
(IC = 30Adc, IB = 1.2Adc)
(IC = 60 Adc, IB = 4.0 Adc)
(IC = 30 Adc, IB = 1 -2 Adc, TC = 100°C)
Base-Emitter Saturation Voltage
(IC = 30 Adc, IB = 1 .2 Adc)
(IC = 30 Adc, IB = 1 2 Adc, TC = 100°C)
vCE(sat)
—
—
vBE(sat)
—
—
Diode Forward Voltage
(Ip = 30 Adc)
Vf
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 vdc, iE = o, ftest = 1 .0 kHz)
Cob
175
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
(Vcc = 1/5 Vdc, lc = 30A,
Duty Cycle < 2.0%).
td
—
tr
—
ts
—
tf
—
Inductive Load, Clamped (Table 1)
Storage Time
iCM = so A(Pk), VCEM = 200v, iBi = 1 .2 A,
tsv
—
Crossover Time
VBE(off) = 5V,TC = 100°C)
*c
—
Storage Time
tsv
—
Crossover Time
(ICM - 30 A(pk), VCEM - 200 v, IBI - 1 .2 A,
VBE(off) = 5 V, TC = 25°C)
tc
—
Fall Time
tfi
—
(1) Pulse Test: PW = 300 us, Duty Cycle < 2%.
Typ
Max
Unit
—
Vdc
—
mAdc
—
0.25
5.0
—
5.0
mAdc
—
175
mAdc
See Figure 13
See Figure 14
—
1000
—
Vdc
—
2.2
4.0
—
2.4
Vdc
—
3.0
—
3.5
2.5
5.0
Vdc
—
700
PF
0.02
0.2
US
0.30
1.0
US
1.0
3.5
us
0.07
0.5
us
1.2
3.5
US
0.45
2.0
US
0.75
—
us
0.25
_
|is
0.15
—
us
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