AOC2411 Ver la hoja de datos (PDF) - Unspecified

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AOC2411

30V P-Channel MOSFET

Unspecified 

AOC2411

30V P-Channel MOSFET

General Description

The AOC2411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate

voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

Features

Vds

-30V

ID (at VGS=-4.5V)

-3.4A

RDS(ON) (at VGS=-4.5V) < 45mΩ

RDS(ON) (at VGS=-2.5V) < 60mΩ

Bottom View

3

2

D

D

Top View

Equivalent Circuit

D

S

G

Pin1(G)

4

1

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

Source Current (DC) Note1

Source Current (Pulse) Note2

VGS

TA=25°C I D

ISM

Power Dissipation Note1 TA=25°C

Junction and Storage Temperature Range

PD

TJ, TSTG

Maximum

-30

±12

-3.4

-52

0.8

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient Note1

Maximum Junction-to-Ambient Note1

t ≤ 5s

Steady-State

RθJA

75

130

Maximum Junction-to-Foot(Drain)

Steady-State

RθJF

16

Max

90

155

20

Note 1. Mounted on minimum pad PCB

Note 2. PW <300 µs pulses, duty cycle 0.5% max

Units

V

V

A

W

°C

Units

°C/W

°C/W

°C/W

1/4

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