SD1127 Ver la hoja de datos (PDF) - Advanced Power Technology
Número de pieza
componentes Descripción
Fabricante
SD1127 Datasheet PDF : 3 Pages
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RF & MICROWAVE TRANSISTORS
VHF FM MOBILE APPLICATIONS
Features
• 175 MHz
• 12.5 VOLTS
• POUT = 4.0 W MINIMUM
• GP = 12.0 dB
• GROUNDED EMITTER
DESCRIPTION:
The SD1127 is a epitaxial silicon NPN transistor designed
primarily for VHF mobile communications. The chip of this
transistor is mounted on a beryllia pill to isolate the collector
lead and ground the emitter lead for high gain performance
SD1127
1. Collector
2. Base
3. Emitter
TO-39
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO
VCEO
VCES
VEBO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter – Base Voltage
IC
Collector Current
Ptot
Total Power Dissipation
TSTG
TJ
Storage Temperature
Junction Temperature
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
Value
36
18
36
4.0
.64
8.0
-65 + 200
+200
21.9
Unit
V
V
V
V
A
W
°C
°C
°C/W
SD1127 – RevB 2/06
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
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