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BYG22DHM3_A/I Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Fabricante
BYG22DHM3_A/I
Vishay
Vishay Semiconductors 
BYG22DHM3_A/I Datasheet PDF : 5 Pages
1 2 3 4 5
www.vishay.com
BYG22A, BYG22B, BYG22D
Vishay General Semiconductor
60
50
40
30
20
10
0
0
TA = 125 °C
TA = 100 °C
TA = 75 °C
TA = 50 °C
TA = 25 °C
IR = 0.5 A, iR = 0.125 A
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Fig. 7 - Max. Reverse Recovery Charge vs. Forward Current
1000
125 K/W DC
100 tp/T = 0.5
tp/T = 0.2
tp/T = 0.1
10 tp/T = 0.05
tp/T = 0.02
tp/T = 0.01
Single Pulse
1
10-5
10-4
10-3
10-2
10-1
100
101
102
Pulse Length (s)
Fig. 8 - Thermal Response
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 17-Aug-17
4
Document Number: 88959
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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