2SK3289 Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SK3289 Datasheet PDF : 7 Pages
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2SK3289
Silicon N Channel MOS FET
High Speed Switching
Features
• Low on-resistance
RDS = 1.26Ω typ. (at VGS =10V , ID =150mA)
RDS = 2.8Ω typ. (at VGS =4V , ID =50mA)
• 4V gate drive device
• Small package (CMPAK)
Outline
CMPAK
3
D
G
S
ADE-208-743B(Z)
Target Specification 3rd.Edition.
December 1998
1
2
1. Source
2. Gate
3. Drain
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