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Fabricante

BF420

High Voltage Transistors NPN Silicon

ON Semiconductor 

BF420 BF422

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 25 mAdc, VCE = 20 Vdc)

BF420

BF422

hFE

—

50

—

50

—

Collector–Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc)

Base–Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc)

VCE(sat)

—

VBE(sat)

—

Vdc

0.5

Vdc

2.0

SMALL–SIGNAL CHARACTERISTICS

CurrentGain — Bandwidth Product

(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)

fT

MHz

60

—

Common Emitter Feedback Capacitance

(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)

Cre

pF

—

1.6

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