BC517G(2011) Ver la hoja de datos (PDF) - ON Semiconductor
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BC517G Datasheet PDF : 6 Pages
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BC517
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 2.0 mAdc, IBE = 0)
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 30 Vdc)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VCB = 10 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 20 mAdc, VCE = 2.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
2. fT = |hfe| • ftest
Symbol
Min
Typ
Max
V(BR)CES
30
V(BR)CBO
40
V(BR)EBO
10
ICES
−
ICBO
−
IEBO
−
−
−
−
−
−
−
−
500
−
100
−
100
hFE
30,000
−
−
VCE(sat)
−
−
1.0
VBE(on)
−
−
1.4
fT
−
200
−
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
−
Vdc
Vdc
MHz
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2
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