BSP31 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BSP31 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP medium power transistors
Product specification
BSP31; BSP32; BSP33
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
93
K/W
12
K/W
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
BSP32
DC current gain
IE = 0; VCB = −60 V
IE = 0; VCB = −60 V; Tj = 150 °C
IC = 0; VEB = −5 V
IC = −100 µA; VCE = −5 V; note 1
IC = −100 mA; VCE = −5 V; note 1
IC = −500 mA; VCE = −5 V; note 1
VCEsat
VBEsat
Cc
Ce
fT
BSP31; BSP33
IC = −100 µA; VCE = −5 V; note 1
IC = −100 mA; VCE = −5 V; note 1
IC = −500 mA; VCE = −5 V; note 1
collector-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1
IC = −500 mA; IB = −50 mA; note 1
base-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1
IC = −500 mA; IB = −50 mA; note 1
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
emitter capacitance
IC = ic = 0; VEB = −0.5 V; f = 1 MHz
transition frequency
IC = −50 mA; VCE = −10 V; f = 100 MHz
Switching times (between 10% and 90% levels)
ton
turn-on time
toff
turn-off time
ICon = −100 mA; IBon = −5 mA; IBoff = 5 mA
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.01.
MIN.
−
−
−
10
40
30
30
100
50
−
−
−
−
−
−
100
−
−
MAX. UNIT
−100 nA
−50 µA
−100 nA
−
120
−
−
300
−
−250
−500
−1
−1.2
20
120
−
mV
mV
V
V
pF
pF
MHz
500 ns
650 ns
1999 Apr 26
3
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