HSK120 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

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componentes Descripción

Fabricante

HSK120

Silicon Epitaxial Planar Diode for High Speed Switching

Hitachi -> Renesas Electronics 

HSK120

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Peak reverse voltage

Reverse voltage

Peak forward current

Non-Repetitive peak

forward surge current

VRM

VR

I FM

I *1

FSM

Average rectified current IO

Junction temperature

Tj

Storage temperature

Tstg

Note 1. Within 1µs forward surge current..

Value

70

60

450

4

150

175

-65 to +175

Unit

V

V

mA

A

mA

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Forward voltage

Reverse voltage

Reverse current

Capacitance

Reverse recovery

time

Symbol Min Typ Max Unit Test Condition

VF

— — 0.8 V

IF = 10 mA

VR

70 — — V

IR = 5µA

IR

— — 0.1 µA VR = 60V

C

— — 3.0 pF VR = 0V, f = 1 MHz

t rr

—

—

3.0 ns

IF = 10 mA, VR = 6V, RL = 50Ω, Irr = 0.1IR

2

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