MCP3421
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all parameters apply for TA = -40°C to +85°C, VDD = +5.0V, VSS = 0V,
VIN+ = VIN- = VREF/2. All ppm units use 2*VREF as full scale range.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Gain Error (Note 5)
—
0.05
0.35
%
PGA = 1, DR = 3.75 SPS
PGA Gain Error Match (Note 5)
—
0.1
—
%
Between any 2 PGA gains
Gain Error Drift (Note 5)
—
15
—
ppm/°C PGA=1, DR=3.75 SPS
Offset Error
VOS
—
15
Offset Drift vs. Temperature
Common-Mode Rejection
—
50
—
105
40
µV Tested at PGA = 1
VDD = 5.0V and DR = 3.75 SPS
—
nV/°C VDD = 5.0V
—
dB
at DC and PGA =1,
Gain vs. VDD
—
110
—
5
—
dB
at DC and PGA =8,
TA = +25°C
—
ppm/V TA = +25°C, VDD = 2.7V to 5.5V,
PGA = 1
Power Supply Rejection at DC
—
100
—
dB
TA = +25°C, VDD = 2.7V to 5.5V,
PGA = 1
Power Requirements
Voltage Range
Supply Current during
Conversion
VDD
2.7
—
IDDA
—
155
—
145
Supply Current during Standby
IDDS
—
0.1
Mode
I2C Digital Inputs and Digital Outputs
5.5
V
190
µA
VDD = 5.0V
—
µA
VDD = 3.0V
0.5
µA
High level input voltage
VIH
0.7 VDD
—
Low level input voltage
VIL
—
—
Low level output voltage
VOL
—
—
Hysteresis of Schmitt Trigger
VHYST 0.05VDD
—
for inputs (Note 7)
Supply Current when I2C bus
IDDB
—
—
line is active
VDD
0.3VDD
0.4
—
10
V
V
V
IOL = 3 mA, VDD = +5.0V
V
fSCL = 100 kHz
µA
Input Leakage Current
IILH
—
—
IILL
-1
—
Pin Capacitance and I2C Bus Capacitance
1
µA
VIH = 5.5V
—
µA
VIL = GND
Pin capacitance
I2C Bus Capacitance
CPIN
—
—
Cb
—
—
10
pF
400
pF
Note 1: Any input voltage below or greater than this voltage causes leakage current through the ESD diodes at the input pins.
This parameter is ensured by characterization and not 100% tested.
2: This input impedance is due to 3.2 pF internal input sampling capacitor.
3: The total conversion speed includes auto-calibration of offset and gain.
4: INL is the difference between the endpoints line and the measured code at the center of the quantization band.
5: Includes all errors from on-board PGA and VREF.
6: Full Scale Range (FSR) = 2 x 2.048/PGA = 4.096/PGA.
7: This parameter is ensured by characterization and not 100% tested.
8: This parameter is ensured by design and not 100% tested.
DS22003E-page 4
© 2009 Microchip Technology Inc.