2SB860 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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2SB860

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=∞

V(BR)EBO Emitter-base breakdown votage

IE=-1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=-1 A;IB=-0.1 A

ICEO

Collector cut-off current

VCE=-80V; RBE=∞

IEBO

Collector cut-off current

VEB=-3.5V; IC=0

hFE-1

DC current gain

IC=-0.5A ; VCE=-4V

hFE-2

DC current gain

IC=-50mA ; VCE=-4V

Product Specification

2SB860

MIN TYP. MAX UNIT

-100

V

-4

V

-1.0

V

-100 Α

-50 Α

50

250

25

350

2

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