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MGSF1P02LT1

Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors

Motorola => Freescale 

MGSF1P02LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 10 µAdc)

V(BR)DSS

20

Zero Gate Voltage Drain Current

(VDS = 16 Vdc, VGS = 0 Vdc)

(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS(1)

IGSS

—

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

VGS(th)

1.0

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 1.5 Adc)

(VGS = 4.5 Vdc, ID = 0.75 Adc)

rDS(on)

—

—

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

(VDS = 5.0 Vdc)

(VDS = 5.0 Vdc)

Ciss

—

Coss

—

Transfer Capacitance

SWITCHING CHARACTERISTICS(2)

(VDG = 5.0 Vdc)

Crss

—

Turn–On Delay Time

td(on)

—

Rise Time

Turn–Off Delay Time

(VDD = 15 Vdc, ID = 1.0 Adc,

RL = 50 Ω)

tr

—

td(off)

—

Fall Time

tf

—

Gate Charge (See Figure 6)

QT

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Continuous Current

IS

—

Pulsed Current

ISM

—

Forward Voltage(2)

VSD

—

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

Typ

Max

Unit

—

—

Vdc

µAdc

—

1.0

—

10

—

±100

nAdc

1.7

2.4

Vdc

0.235

0.375

0.350

0.500

Ohms

100

—

pF

90

—

40

—

2.5

—

ns

1.0

—

16

—

8.0

—

6000

—

pC

—

0.6

A

—

0.75

1.5

—

V

TYPICAL ELECTRICAL CHARACTERISTICS

1.5

VDS = 10 V

1.25

1.5

VGS = 3.5 V

1.25

3.25 V

1

0.75

0.5

0.25

0

1

– 55°C

TJ = 150°C

25°C

1.5

2

2.5

3

3.5

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. Transfer Characteristics

1

0.75

0.5

0.25

0

0

3.0 V

2.75 V

2.5 V

2.25 V

1 2 3 4 5 6 7 8 9 10

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. On–Region Characteristics

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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