Typical Characteristics
-5.0
-4.5
-4.0
-3.5
-3.0
IB=-300uA
IB=-275uA
-2.5
IB=-250uA
-2.0
IB=-225uA
-1.5
IB=-200uA
-1.0
IB=-175uA
-0.5
IB=0
-0.0
-0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0
VCE(V), COLLECTOR EMITTER VOLTAGE
Figure 1. Static Characteristic
-10
IC=500IB
VBE(SAT)
VCE (S A T)
-1
-0.1
-0.1
-1
-10
IC(A), COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
IC MAX (PULSE)
IC MAX. (DC)
-1
-0.1
1ms
10ms
DC
-0.01
-1
-10
-100
VCE(V), COLLECTOR EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2000 Fairchild Semiconductor International
10000
1000
VCE=-2V
100
-0.1
-1
-10
IC(A), COLLECTOR CURRENT
Figure 2. DC current Gain
-4.0
VCE=-2V
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
-0.0
-0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2
VBE(V), BASE EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
20
18
16
14
12
10
8
6
4
2
0
0
25
50
75
100
125
150
175
TC(℃) CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000