SI3445DV Ver la hoja de datos (PDF) - Fairchild Semiconductor
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SI3445DV Datasheet PDF : 5 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = –250 µA
–20
ID = –250 µA,Referenced to 25°C
VDS = –16 V,
VGS = 8 V,
VGS = –8 V
VGS = 0 V
VDS = 0 V
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = –250 µA
–0.4
ID = –250 µA,Referenced to 25°C
VGS = –4.5 V,
VGS = –2.5 V,
VGS = –1.8 V,
ID = –5.5 A
ID = –4.8 A
ID = –4.0 A
VGS = –4.5 V, VDS = –5 V
–20
VDS = –5 V,
ID = –3.5 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = –10 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6 Ω
VDS = –10 V,
VGS = –4.5 V
ID = –3.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –1.3 A (Note 2)
–12
–0.7
3
24
30
42
23
1926
530
185
13
11
90
45
19
4
7.5
–0.7
–1
100
–100
–1.5
33
43
60
23
20
144
72
30
–1.3
–1.2
V
mV/°C
µA
nA
nA
V
mV/°C
mΩ
A
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a. 78°C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board.
b. 156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Si3445DV Rev A(W)
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