SI3445DV Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
SI3445DV Datasheet PDF : 5 Pages
| |||
Typical Characteristics
20
VGS = -4.5V
-2.5V
15
10
-2.0V
-1.8V
5
-1.5V
0
0
1
2
3
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.5
1.4
ID = -5.5A
VGS = -4.5V
1.3
1.2
1.1
1
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
withTemperature.
20
VDS = -5V
15
10
TA = -55oC
25oC
125oC
5
0
0
0.5
1
1.5
2
2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
VGS = -1.5V
2.5
2
-1.8V
-2.0V
1.5
-2.5V
1
-4.5V
0.5
0
5
10
15
20
-ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.12
0.09
ID = -2.8 A
0.06
0.03
TA = 125oC
TA = 25oC
0
1
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1
TA = 125oC
0.1
25oC
0.01
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si3445DV Rev A(W)
Share Link: 