SI3443DV(1997) Ver la hoja de datos (PDF) - Vishay Semiconductors

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Fabricante

SI3443DV
(Rev.:1997)

P-Channel 2.5-V (G-S) MOSFET

Vishay Semiconductors 

Si3443DV

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Static

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Currenta

Drain-Source On-State Resistancea

Forward Transconductancea

Diode Forward Voltagea

Dynamicb

VGS(th)

IGSS

IDSS

ID(on)

rDS(on)

gfs

VSD

VDS = VGS, ID = –250 mA

VDS = 0 V, VGS = "12 V

VDS = –20 V, VGS = 0 V

VDS = –20 V, VGS = 0 V, TJ = 70_C

VDS = –5 V, VGS = –4.5 V

VGS = –4.5 V, ID = –4.4 A

VGS = –2.7 V, ID = –3.7 A

VGS = –2.5 V, ID = –3.5 A

VDS = –10 V, ID = –4.4 A

IS = –1.7 A, VGS = 0 V

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

trr

Notes

a. Pulse test; pulse width v 300 ms, duty cycle v 2%.

b. Guaranteed by design, not subject to production testing.

VDS = –10 V, VGS = –4.5 V, ID = –4.4 A

VDD = –10 V, RL = 10 W

ID ^ –1.0 A, VGEN = –4.5 V, RG = 6 W

IF = –1.7 A, di/dt = 100 A/ms

Min

–0.6

–15

Typ Max Unit

V

"100

nA

–1

mA

–5

A

0.058

0.065

0.080

0.090

W

0.087

0.100

10

S

–1.2

V

8.5

15

2.8

nC

1.7

15

50

32

60

57

100

ns

40

80

40

80

www.vishay.com S FaxBack 408-970-5600

2-2

Document Number: 70713

S-54948—Rev. B, 29-Sep-97

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